کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797085 | 1023765 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and process induced dislocations in zinc oxide crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Zinc oxide crystals were grown using hydrothermal method, and the habit faces were indexed by computing from inter-axial angles of the as grown boules. The dislocation structures were studied using synchrotron white beam X-ray topography. Grown-in dislocations as well as process-induced defects were characterized in the ZnO crystals. Knoop and Vickers micro-hardness were studied on sliced crystal plates. Chemical etching was used to study the dislocations running perpendicular to the wafer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 297, Issue 1, 15 December 2006, Pages 74–79
Journal: Journal of Crystal Growth - Volume 297, Issue 1, 15 December 2006, Pages 74–79
نویسندگان
G. Dhanaraj, M. Dudley, D. Bliss, M. Callahan, M. Harris,