کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1797147 1023769 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Shaped crystal growth of Ce3+-doped Lu2(1−x)Y2xSiO5 oxyorthosilicate for scintillator applications by pulling-down technique
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Shaped crystal growth of Ce3+-doped Lu2(1−x)Y2xSiO5 oxyorthosilicate for scintillator applications by pulling-down technique
چکیده انگلیسی

The pulling-down technique has been applied to produce Lu2(1−x)Y2xSiO5:Ce3+ (LYSO:Ce) shaped single crystals with diameter control. The yttrium content in the crystal was between 5% and 6% (x between 0.025 and 0.030). Ce concentration was in the range 0.05%–0.10%. The thermal and growth conditions allowing fabrication of transparent cylindrical single crystal were optimised. The crystals have been grown under 1 bar pressure in argon atmosphere using pulling rates from 0.1 to 0.5 mm/min. Complete (100%) discharge of the crucible after the growth process was performed with practically empty container ready for the next growth run. The as-pulled crystals demonstrated scintillation behaviour.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 289, Issue 1, 15 March 2006, Pages 172–177
نویسندگان
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