Combined annealing temperature and thickness effects on properties of PbZr0.53Ti0.47O3 films on LaNiO3/Si substrate by sol–gel process

PbZr0.53Ti0.47O3 (PZT) films with different thickness were deposited on LaNiO3-coated Si substrate by modified sol–gel process. The thickness effect on structure and properties of PZT films annealed at different temperature have been investigated. Single perovskite-phase PZT films with preferred [1 0 0] orientation and denser columnar structure were obtained, when annealed at a lower temperature of 600 °C, whereas a higher annealing temperature of 700 °C resulted in [1 1 0] preferred orientation and porous structure. The dielectric and ferroelectric properties of PZT films annealed at different temperature were evaluated systemically as a function of thickness, and the dielectric and ferroelectric properties of PZT films were found to greatly depend on both thickness and annealing temperature.