کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797286 | 1023775 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and Raman spectroscopic investigation of CaxGd1âxVO4 single crystals for potential Raman laser media
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
CaxGd1âxVO4 crystals were grown by the Czochralski technique. X-ray diffraction analysis showed that as-grown crystals have a zircon-type structure belonging to the tetragonal system. The Ca2+-doped concentration was measured by ICP spectroscopy. It was found that the segregation coefficient of the Ca2+ ion (kCa) decreased with increasing Ca2+ concentration. XPS experiments validated that V atoms remained pentavalent in CaxGd1âxVO4 crystals. The Raman spectra of CaxGd1âxVO4 crystals were investigated at room temperature. The results indicated that the Raman line intensity at about 885Â cmâ1 increased exponentially with the increase of Ca2+ concentration. The Ca2+ dopant influenced the Raman property of GdVO4 single crystals.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 293, Issue 2, 1 August 2006, Pages 452-457
Journal: Journal of Crystal Growth - Volume 293, Issue 2, 1 August 2006, Pages 452-457
نویسندگان
Fulan Zhong, Jin Zhu, Xinsong Lin, Jianzhong Chen, Naifeng Zhuang,