Growth of Ga(1−x)InxSb alloys by Vertical Bridgman technique under alternating magnetic field

GaInSb samples have been grown by the Vertical Bridgman technique with alternating magnetic field in order to improve mixing of the rejected InSb in the melt. Three values of the magnetic field were used 0, 2, 3 mT and the solid–liquid interface demarcation during solidification has been carried out by Peltier pulse marking technique. The chemical composition of the grown samples has been checked using wavelength dispersive X-ray microanalysis technique (WDX) and particle induced X-ray emission technique (PIXE).The GaInSb samples with a nominal In concentrations of 3% and 8%, grown under alternating magnetic field, show a radial segregation almost constant along the ingot. The electromagnetic mixing effect is also observed in the profile of interface curvature and axial segregation.