کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797375 | 1023789 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystal growth and infrared spectroscopy of Cr:Cd1âxZnxTe and Cr:Cd1âxMgxTe
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The absorption and emission properties of Cr2+-doped II-VI semiconductors are of considerable current interest for applications in mid-infrared (MIR) solid-state lasers and for passive optical Q-switches. In this paper, the crystal growth and compositional effects on the optical properties of Cr:Cd1âxZnxTe (x=0.05, 0.1, 0.2) and Cr:Cd1âxMgxTe (x=0.15, 0.35) were investigated. Undoped Cd1âxZnxTe and Cd1âxMgxTe crystals were grown by Bridgman technique. Cr doping of both materials was achieved either in situ during growth or through a thermal diffusion process. For Cr:Cd1âxZnxTe, the Cr2+ absorption properties were strongly dependent on the host composition and spectral blue shifts were observed with increasing Zn content. The Cr2+ absorption peak shifted from â¼1910Â nm for Cr:CdTe to â¼1815Â nm for Cr:Cd0.8Zn0.2Te. Only small spectral shifts were observed for the MIR emission from Cr:Cd1âxZnxTe. On the contrary, the optical properties of Cr2+ in Cr:Cd1âxMgxTe were nearly independent of the host composition and resembled Cr:CdTe.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 287, Issue 2, 25 January 2006, Pages 243-247
Journal: Journal of Crystal Growth - Volume 287, Issue 2, 25 January 2006, Pages 243-247
نویسندگان
U. Hömmerich, A.G. Bluiett, I.K. Jones, S.B. Trivedi, R.T. Shah,