کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797398 | 1023789 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of bulk grown GaN and AlN single crystal materials
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of bulk grown GaN and AlN single crystal materials Characterization of bulk grown GaN and AlN single crystal materials](/preview/png/1797398.png)
چکیده انگلیسی
Sublimation method, spontaneously nucleated as well as seeded on SiC substrates, has been employed for growing AlN bulk crystals. For GaN growth, in addition to the sublimation method using sapphire substrates, ammonothermal growth (analogous to the hydrothermal method) on HVPE GaN seeds is also being used. Thick plates/films of AlN and GaN grown by these methods have been characterized by synchrotron white beam X-ray topography (SWBXT) and high resolution X-ray diffraction (HRXRD). Results from a recent set of growth experiments are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 287, Issue 2, 25 January 2006, Pages 349–353
Journal: Journal of Crystal Growth - Volume 287, Issue 2, 25 January 2006, Pages 349–353
نویسندگان
Balaji Raghothamachar, Jie Bai, Michael Dudley, Rafael Dalmau, Dejin Zhuang, Ziad Herro, Raoul Schlesser, Zlatko Sitar, Buguo Wang, Michael Callahan, Kelly Rakes, Phanikumar Konkapaka, Michael Spencer,