Nanosecond pulsed laser ablation of Ge investigated by employing photoacoustic deflection technique and SEM analysis

Nanosecond pulsed laser ablation phenomena of single crystal Ge (100) has been investigated by employing photoacoustic deflection as well as SEM analysis techniques. Nd: YAG laser (1064 nm, 10 ns, 1–10 Hz) at various laser fluences ranging from 0.2 to 11 J cm−2 is employed as pump beam to ablate Ge targets. In order to evaluate in-situe ablation threshold fluence of Ge by photoacoustic deflection technique, Continuous Wave (CW) He–Ne laser (632 nm, power 10 mW) is employed as a probe beam. It travels parallel to the target surface at a distance of 3 mm and after passing through Ge plasma it causes deflection due to density gradient of acoustic waves. The deflected signal is detected by photodiode and is recorded by oscilloscope. The threshold fluence of Ge, the velocity of ablated species and the amplitude of the deflected signal are evaluated. The threshold fluence of Ge comes out to be 0.5 J cm−2 and is comparable with the analytical value. In order to compare the estimated value of threshold with ex-situe measurements, the quantitative analysis of laser irradiated Ge is performed by using SEM analysis. For this purpose Ge is exposed to single and multiple shots of 5, 10, 50 and 100 at various laser fluences ranging from 0.2 to 11 J cm−2. The threshold fluence for single and multiple shots as well as incubation coefficients are evaluated. It is observed that the value of incubation co-efficient decreases with increasing number of pulses and is therefore responsible for lowering the threshold fluence of Ge. SEM analysis also reveals the growth of various features such as porous structures, non-uniform ripples and blisters on the laser irradiated Ge. It is observed that both the fluence as well as number of laser shots plays a significant role for the growth of these structures.