Composition dependence of the band gap energy for the dilute nitride and As-rich GaNxSbyAs1−x−y (0≤x≤0.05, 0≤y≤0.3)

The double band anticrossing model is modified and the modified double band anticrossing model is used to describe the band gap energy of the dilute nitride GaNxSbyAs1−x−y. It is found that the parameter CMSbCMSb is independent on Sb content when the Sb content is not larger than 0.3. We also find that the main factor reducing the band gap energy is the coupling interaction between the N level and the CBM of GaAsSb. In addition, it is found that the impurity-host interaction is determined by the energy difference and the mismatches in size and electronegativity between the introduced atoms and the anions of the host material.