Relationship between Ga3+ concentration and luminescence properties of Eu2(MoO4)3 films at low annealing temperature

Ga3+-doped Eu2(MoO4)3 films were prepared by electron beam evaporation and annealed at 400 °C–800 °C in oxidizing atmosphere, and the relationship between Ga3+ concentration and luminescence properties of the films was explored combining the characterization methods of XRD, excitation, emission spectra and decay curves. It was found that intensity ratio I(5D0–7F2)/I(5D0–7F1) was extremely susceptible to Ga3+ concentration, and the luminescence intensity was significantly influenced by the doping of Ga3+. The intensity increased with Ga3+ concentration ranging from 0 to 0.65 mol and reached a maximum at 0.3 mol and decreased when exceeding 0.65 mol. Finally, the effect of annealing temperature on photoluminescence was also obtained.