کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1808472 | 1525166 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Relationship between Ga3+ concentration and luminescence properties of Eu2(MoO4)3 films at low annealing temperature
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Relationship between Ga3+ concentration and luminescence properties of Eu2(MoO4)3 films at low annealing temperature Relationship between Ga3+ concentration and luminescence properties of Eu2(MoO4)3 films at low annealing temperature](/preview/png/1808472.png)
چکیده انگلیسی
Ga3+-doped Eu2(MoO4)3 films were prepared by electron beam evaporation and annealed at 400 °C–800 °C in oxidizing atmosphere, and the relationship between Ga3+ concentration and luminescence properties of the films was explored combining the characterization methods of XRD, excitation, emission spectra and decay curves. It was found that intensity ratio I(5D0–7F2)/I(5D0–7F1) was extremely susceptible to Ga3+ concentration, and the luminescence intensity was significantly influenced by the doping of Ga3+. The intensity increased with Ga3+ concentration ranging from 0 to 0.65 mol and reached a maximum at 0.3 mol and decreased when exceeding 0.65 mol. Finally, the effect of annealing temperature on photoluminescence was also obtained.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 483, 15 February 2016, Pages 4–7
Journal: Physica B: Condensed Matter - Volume 483, 15 February 2016, Pages 4–7
نویسندگان
Xue Yin, Shenwei Wang, Ling Li, Guangyao Mu, Wubiao Duan, Lixin Yi,