Frequency dependent negative capacitance effect and dielectric properties of swift heavy ion irradiated Ni/oxide/n-GaAs Schottky diode

The Ni/n-GaAs Schottky barrier diode having thin interfacial oxide layer was subjected to 25 MeV C4+ ion irradiation at selected fluences. The in-situ capacitance and dielectric properties were investigated in the 1 KHz to 5 MHz frequency range. The results show a decrease in capacitance with increase in ion fluence at low frequencies. Interestingly, a negative capacitance effect was also observed in this frequency range in all the samples. As a consequence, changes were observed in parameters like series resistance, conductance, dielectric loss, dielectric constant, loss tangent and ac electrical conductivity. At high frequencies, the capacitance reaches the geometric value ‘C0’. The results were interpreted in terms of the generation of irradiation induced traps, carrier capture and emission from deep and shallow states and its frequency dependent saturation effects.