کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1808651 1525169 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of doping concentration on the conductivity and optical properties of p-type ZnO thin films
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Effect of doping concentration on the conductivity and optical properties of p-type ZnO thin films
چکیده انگلیسی

Nitrogen doped ZnO (NZO) thin films were synthesized on glass substrates by the sol–gel and spin coating method. Zinc acetate dihydrates and ammonium acetate were used as precursors for zinc and nitrogen, respectively. X-ray diffraction study showed that the thin films have a hexagonal wurtzite structure corresponding (002) peak for undoped and doped ZnO thin films. The transmittance of the films was above 80% and the band gap of the film varies from 3.21±0.03 eV for undoped and doped ZnO. The minimum resistivity of NZO thin films was obtained as 0.473 Ω cm for the 4 at% of nitrogen (N) doping with a mobility of 1.995 cm2/V s. The NZO thin films showed p-type conductivity at 2 and 3 at% of N doping. The AC conductivity measurements that were carried out in the frequency range 10 kHz to 0.1 MHz showed localized conduction in the NZO thin films. These highly transparent ZnO films can be used as a possible window layer in solar cells.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 480, 1 January 2016, Pages 31–35
نویسندگان
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