کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1808761 | 1525171 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and luminescence properties of CaxBa1âxGa2S4:Eu2+ chalcogenide semiconductor solid solutions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
The structural and luminescence properties of chalcogenide semiconductor CaxBa1âxGa2S4 solid solutions (x=0.1-0.9) doped with 7Â at% of Eu2+ ions were studied at room temperature. It was found, that the crystal structure of CaxBa1âxGa2S4 solid solutions varies with the amount of Ca2+ cations and phase transition from cubic to orthorhombic takes place with increase of x value. CaxBa1âxGa2S4:Eu2+ solid solutions exhibit intense photoluminescence in cyan to yellow spectral region depending on x due to 5dâ4f electron-dipole transitions in Eu2+ ions. The peak position of the emission band shifts from 506Â nm for x=0.1 to 555Â nm for x=0.9 and the full width at half maximum of the emission band varies from 62Â nm to 72Â nm depending on the symmetry of the crystal lattice. The PL excitation spectrum of CaxBa1âxGa2S4:Eu2+ covers the range at half maximum from 310Â nm to 480Â nm for x=0.1 and to 520Â nm for x=0.9. It was shown that long-wavelength shift is caused by influence of the growing crystal field strength on Eu2+ ions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 478, 1 December 2015, Pages 58-62
Journal: Physica B: Condensed Matter - Volume 478, 1 December 2015, Pages 58-62
نویسندگان
B.G. Tagiyev, O.B. Tagiyev, A.I. Mammadov, Vu Xuan Quang, T.G. Naghiyev, S.H. Jabarov, M.S. Leonenya, G.P. Yablonskii, N.T. Dang,