کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1808800 | 1525174 | 2015 | 7 صفحه PDF | دانلود رایگان |
In this present work, the effects of the structure parameters such as the right-well width and the right-barrier height on the linear, third-order nonlinear and total absorption and refractive index changes of asymmetric double semi-V-shaped quantum well are theoretically studied by using the compact-density matrix approach and iterative method. The electronic structure of this system is obtained by solving Schrödinger equation within the framework of effective mass approximation. Numerical results are presented for a typical GaAs/AlxGa1-xAsGaAs/AlxGa1-xAs asymmetric double semi-V-shaped quantum well. The obtained results show that the right-well width and the right-barrier height have great effects on the optical characteristics of these structures.
Journal: Physica B: Condensed Matter - Volume 475, 15 October 2015, Pages 110–116