Effect of annealing on the charge–voltage characteristics of SrBi2(TaxNb1−x)2O9 films

The effect of changes of the Nb content and annealing on charge–voltage and current–voltage characteristics of film structures Pt/SrBi2(Ta1−xNbx)2O9/Pt/TiO2/SiO2/Si-substrate with х=0, 0.1, 0.2 was studied theoretically and experimentally.Theoretical modeling, which takes into account the mobile charged donors impact on the features of charge–voltage and current–voltage characteristics of ferroelectric-semiconductor films, revealed the changes of conductivity value and ferroelectric parameters. The results of theoretical analysis and experimental results are in qualitative agreement.