Current response and gain in plasmonic vertical diodes in the presence of electrical and optical THz excitations

An analysis of generated Terahertz (THz) current oscillations taking place in one dimensional n+nn+n+nn+ InGaAs diodes due to an optical photoexcitation and due to a dc operating bias are presented at room temperature. These oscillations have been investigated, photoresponse resonance frequency appears clearly at the THz spectrum. We study the current gain and the differential mobility in both n   and n+n+ regions according to the optical photoexcitation as well as with respect to dc operating bias. The obtained results demonstrate the possibility to use vertical diodes as THz resonant detectors.