کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1809425 1525194 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electronic structure of CdTe using GGA+USIC
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Electronic structure of CdTe using GGA+USIC
چکیده انگلیسی

A simple method to obtain a gap-corrected band structure of cadmium telluride within density functional theory is presented. On-site Coulomb self-interaction-like correction potential has been applied to the 5p-shell of Te and the 4d-shell of Cd. The predicted physical properties are similar to or better than those obtained with hybrid functionals and at largely reduced computational cost. In addition to the corrected electronic structure, the lattice parameters and the bulk modulus are improved. The relative stabilities of the different phases (zincblende, wurtzite, rocksalt and cinnabar) are preserved. The formation energy of the cadmium vacancy remains close to the values obtained from hybrid functional calculations.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 452, 1 November 2014, Pages 119–123
نویسندگان
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