کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1809589 | 1525199 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
First-principle study on the X (X=N, P, As, Sb) doped (9.0) single-walled SiC nanotubes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The structural and electronic properties of N, P, As and Sb doped (9.0) single-walled SiC nanotubes (SWSiCNTs) are investigated by the first-principle theory. The calculated results indicated that one P, As or Sb atom substituted for one C atom, which could be considered as n-type semiconductors. When one N, P, As or Sb replace one Si atom, the model shows the character of semi-metallic, n-type semiconductor, p-type semiconductor respectively. These results indicated that with the addition of atomic radius and reduction of electronegativity, dopant of VA elements will bring bizarre change of electronic properties. These results are expected to give valuable information in building nanoscale electronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 447, 15 August 2014, Pages 56–61
Journal: Physica B: Condensed Matter - Volume 447, 15 August 2014, Pages 56–61
نویسندگان
Jianfeng Dai, Dacheng Chen, Qiang Li,