کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1809629 1525206 2014 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thickness and bilayer number dependence on exchange bias in ferromagnetic/antiferromagnetic multilayers based on La1−xCaxMnO3
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Thickness and bilayer number dependence on exchange bias in ferromagnetic/antiferromagnetic multilayers based on La1−xCaxMnO3
چکیده انگلیسی

In this work, simulations of ferromagnetic/antiferromagnetic multilayers of La1−xCaxMnO3 have been carried out by using the Monte Carlo method combined with the Metropolis algorithm and the classical Heisenberg model. In the Hamiltonian we have considered three contributions: nearest neighbor exchange interaction, magnetocrystalline anisotropy and Zeeman interaction. Samples were built by including three types of Mn ions depending on their valence state and type of ionic orbital. Both the number of layers and the antiferromagnetic layer thickness influence on the exchange bias phenomenon are analyzed. Hysteresis loops results exhibit not only a shift as evidence of exchange bias but also the formation of plateaus or steps caused by the presence of more than one interface and the low layers thickness. Each layer presents a strong magnetic behavior because the magneto static energy favors formation of multi-domains in contrast with the single-domains of a single layer FM producing one sub-Loop of each domain (each layer). On the other hand, as the number of layers (n) increases, the sub-cycles tend to disappear. As the plateaus disappear, the system is more effective, increasing the coercive and bias fields. Moreover, domain sizes (layers thickness) also affect the shape of the hysteresis loop. On increasing the thickness of the AFM layer, a decrease in the plateaus produced by the uncoupling is generated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 440, 1 May 2014, Pages 61–66
نویسندگان
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