Energy band‐gap shift with gamma-ray radiation and carbon n-delta-doping in GaAs/AlGaAs QWs structures

The aim of this work is to investigate two different delta-doping (silicon and carbon) after gamma irradiation. Delta-doping GaAs/AlGaAs heterojunctions grown by molecular beam epitaxy on (1 0 0) GaAs substrates have been studied by photoluminescence (PL) spectroscopy. A theoretical study was conducted using the resolution of Schrödinger and Poisson equations written within the Hartree approximation. PL measurements as function of the power excitation at 10 K shows a red-shift due to free carriers effect on properties of GaAs/AlGaAs quantum well (QW). Its dependence on the density of the two-dimensional electron gas (2DEG) at the GaAs/AlGaAs interface has been analyzed on the basis of the quantum confined Stark, the band-gap renormalization and Burstein–Moss (BM) effects. It is noted that the gamma radiation has changed the type of the exciton recombination.