کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1809669 1525207 2014 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of different annealing temperatures on the optical properties of Y3(Al,Ga)5O12:Tb thin films grown by PLD
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Effect of different annealing temperatures on the optical properties of Y3(Al,Ga)5O12:Tb thin films grown by PLD
چکیده انگلیسی

Y3(Al,Ga)5O12:Tb thin films have been prepared on SiO2/Si (1 0 0) substrates by using pulsed laser deposition. The deposited films were annealed in air at 800 °C, 900 °C and 1000 °C. Atomic force microscopy, X-ray diffraction, photoluminescence, X-ray photoelectron spectroscopy and Nano-scanning Auger electron microprobe (NanoSAM) techniques have been applied to characterize these films. The results were compared with those of previously investigated Y3(Al,Ga)5O12:Tb thin films on Si (100) without an oxide (SiO2) layer. No change in photoluminescence (PL) excitation bands as a result of post-annealing was observed. Enhancement of PL intensities was observed as a function of annealing temperatures which was attributed to the improvement in crystallization of the films with an increase in annealing temperature. Annealing caused stress in the films and aggravated cracking occurred. Diffusion occurred, leading to phase changes and changes in stoichiometry. There were regions with enriched Si after annealing at higher temperatures.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 439, 15 April 2014, Pages 77–82
نویسندگان
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