کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1809742 1525215 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Interfacial potentials for Ag/GaN(0 0 0 1) interfaces by inversion of adhesive energy
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Interfacial potentials for Ag/GaN(0 0 0 1) interfaces by inversion of adhesive energy
چکیده انگلیسی
To study the metal/semiconductor interface by means of atomistic simulation, an effective interfacial potential is an important issue. In this work, we use a Chen-Möbius inversion method to study the Ag/GaN(0 0 0 1) interface, and get a concise and general inversion formula, which is used to extract interfacial potentials for the Ag(1 1 1)/GaN(0 0 0 1) interface derived from ab initio adhesive energies. Transferability of those potentials at different environment are checked, and the result show that the inversed potentials are self-consistent and also partially transferable.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 431, 15 December 2013, Pages 97-101
نویسندگان
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