A model for the spectral blueshift caused by the In–N clusters in InxGa1−xNyAs1−y (x<0.4 and y≤0.04) after annealing

A model describing the spectral blueshift of the quaternary alloy InxGa1−xNyAs1−y (x<0.4 and y≤0.04) caused by the In–N clusters after annealing is developed by modifying the band-anticrossing (BAC) model. In the modified BAC model, we consider the effect of the added In–N clusters after annealing on the parameters in the band anticrossing model. It is found that the variation of the N level can be considered to be proportional to the variation of the average number of the nearest-neighbor In atoms per N atom, and the variation of the coupling interaction between the N level and the Γ conduction band is determined by the added In-N bonds and the In content. The obtained results are in agreement well with the experimental data. It is very helpful to explain the essence of the blueshift caused by annealing.