کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1810027 1525226 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Crystal orientation effect on intersubband transition properties of (11n)-oriented ZnCdTe/ZnTe semiconductor quantum dots
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Crystal orientation effect on intersubband transition properties of (11n)-oriented ZnCdTe/ZnTe semiconductor quantum dots
چکیده انگلیسی
Crystal orientation effects on intersubband transition properties of (11n)-oriented ZnCdTe/ZnTe quantum dots (QDs) were investigated by using the continuum elasticity and effective mass theories. In a range of the crystal angle below 30°, the subband energy difference is nearly independent of the crystal angle. On the other hand, it gradually increases with crystal angle θ when the angle exceeds 30° and becomes a maximum near the angle (θ=55°) corresponding to a (111) crystal orientation due to the piezoelectric field effect. The transition matrix element becomes a maximum near the angle θ=15° and a minimum near the crystal angle θ=60°.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 420, 1 July 2013, Pages 36-39
نویسندگان
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