کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1810336 | 1025557 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhancement of room temperature sub-bandgap light emission from silicon photonic crystal nanocavity by Purcell effect
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report the enhancement of sub-bandgap photoluminescence from silicon via the Purcell effect. We couple the defect emission from silicon, which is believed to be due to hydrogen incorporation into the lattice, to a photonic crystal (PhC) nanocavity. We observe an up to 300-fold enhancement of the emission at room temperature at 1550 nm, as compared to an unpatterned sample, which is then comparable to the silicon band-edge emission. We discuss the possibility of enhancing this emission even further by introducing additional defects by ion implantation, or by treating the silicon PhC nanocavity with hydrogen plasma.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 407, Issue 20, 15 October 2012, Pages 4027–4031
Journal: Physica B: Condensed Matter - Volume 407, Issue 20, 15 October 2012, Pages 4027–4031
نویسندگان
A. Shakoor, R. Lo Savio, S.L. Portalupi, D. Gerace, L.C. Andreani, M. Galli, T.F. Krauss, L. O'Faolain,