کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1810364 1525237 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigations on the Si/SiO2 interface defects of silicon nanowires
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Investigations on the Si/SiO2 interface defects of silicon nanowires
چکیده انگلیسی
Silicon nanowires have been fabricated by the metal-assisted chemical etching method. The etching rate of silicon can be adjusted by changing the concentration of titanium in the solution. Investigations by electron spin resonance of silicon nanowires show that Pb0 center is the prominent defect at the Si/SiO2 interfaces, and its density decreases as the etching rate decreases. The red-shift of the Raman peak with decrease of the etching rate indicates a progressive increase of tensile strain in Si at the interface, which induces the shortening of the length of the Si-O bond confirmed by the Fourier transform infrared spectrometer investigations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 409, 15 January 2013, Pages 47-50
نویسندگان
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