Effect of thickness of CdTe/Ge heterojunction photodetectors on optoelectronic properties

To investigate the importance of thickness on the optoelectronic properties of photodetectors, we developed a theoretical model to study its effect on I-V curves. Fitting curves and equations were obtained using the “Table curve 2D” software. Both the theoretical and experimental results exhibited the same behavior, and we determined that the power for the relationship between the photocurrent and reverse voltage was 3 for this photodetector.