کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1810508 1025563 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Carrier decay process of nanoscaled SiGe particles embedded in SiO2 matrix
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Carrier decay process of nanoscaled SiGe particles embedded in SiO2 matrix
چکیده انگلیسی
Nanoscaled SiGe particles (NPs) are formed by ions implantation and annealing treatment methods. For any sample, the total dose of Si and Ge dopants is 3×1016 cm−2. Strong photoluminescence (PL) peaks centered around red emission region are observed. This PL peak red shifts from 653 nm-695 nm with the increase of Ge-doping dose, which is ascribed to the quantum confinement effect. The PL lifetime spectra exhibit a stretched exponential decay with characteristic decay time τ varying from 50.2-23.1 μs and dispersion factor β in the range of 0.67-0.86.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 407, Issue 17, 1 September 2012, Pages 3660-3663
نویسندگان
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