کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1810528 | 1025565 | 2012 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of Te doping on the electronic structure and thermoelectric properties of SnSe
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The effect of Te doping on the electronic structure and thermoelectric properties of SnSe The effect of Te doping on the electronic structure and thermoelectric properties of SnSe](/preview/png/1810528.png)
چکیده انگلیسی
SnSe1âxTex (x=0, 0.0625) bulk materials were fabricated by melting Sn, Se and Te powders and then hot pressing them at various temperatures. The phase compositions of the materials were determined by X-ray diffraction (XRD) and the crystal lattice parameters were refined by the Rietveld method performed with DBWS. XRD analysis revealed that the grains in the materials preferentially grew along the (l 0 0) directions. The structural behavior of SnSe1âxTex (x=0, 0.0625) was calculated using CASTEP package provided by Materials Studio. We found that the band gap of SnSe reduced from 0.643 to 0.608 eV after Te doping. The calculated results were in good agreement with experimental results. The electrical conductivity and the Seebeck coefficient of the as-prepared materials were measured from room temperature to 673 K. The maximum power factor of SnSe is â¼0.7 μW cmâ1Kâ2 at 673 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 407, Issue 21, 1 November 2012, Pages 4154-4159
Journal: Physica B: Condensed Matter - Volume 407, Issue 21, 1 November 2012, Pages 4154-4159
نویسندگان
Song Chen, Kefeng Cai, Wenyu Zhao,