کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1810594 | 1025566 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Different crystallization processes of as-deposited amorphous Ge2Sb2Te5 films on nano- and picosecond single laser pulse irradiation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Different crystallization processes of as-deposited amorphous Ge2Sb2Te5 films on nano- and picosecond single laser pulse irradiation Different crystallization processes of as-deposited amorphous Ge2Sb2Te5 films on nano- and picosecond single laser pulse irradiation](/preview/png/1810594.png)
چکیده انگلیسی
The crystallization dynamics of as-deposited amorphous Ge2Sb2Te5 films induced by nano- and picosecond single laser pulse irradiation is studied using in situ reflectivity measurements. Compared with nanosecond laser pulse, the typical recalescence phenomenon did not appear during the picosecond laser pulse-induced crystallization processes when the pulse fluence gradually increased from crystallization to ablation threshold. The absence of melting and recalescence phenomenon significantly decreased the crystallization time from hundreds to a few tens of nanoseconds. The role of pulse duration time scale on the crystallization process is qualitatively analyzed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 407, Issue 13, 1 July 2012, Pages 2447-2450
Journal: Physica B: Condensed Matter - Volume 407, Issue 13, 1 July 2012, Pages 2447-2450
نویسندگان
Ke Zhang, Simian Li, Guangfei Liang, Huan Huang, Yang Wang, Tianshu Lai, Yiqun Wu,