کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1810673 1025567 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Computational materials design of filled tetrahedral compound magnetic semiconductors
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Computational materials design of filled tetrahedral compound magnetic semiconductors
چکیده انگلیسی

Based on first-principles calculations within the density functional theory, materials design of filled tetrahedral compound magnetic semiconductors is proposed. By using the Korringa–Kohn–Rostoker coherent potential approximation, electronic structures of Mn-doped LiZnAs, LiZnP and LiZnN are calculated. First, by estimating free energy, phase diagrams of these systems are predicted. It is shown that these systems are phase separating systems and favor spinodal decomposition. However, by introducing Li vacancies, spinodal decomposition is strongly suppressed and Mn can be doped up to high concentration. Moreover, the introduced Li vacancies induce ferromagnetic interaction between Mn and thus we can expect high Curie temperature (TC) in these systems. To see the chemical trend, electronic structure and TC of Li(Zn, Cr)As are also calculated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 407, Issue 15, 1 August 2012, Pages 2950–2953
نویسندگان
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