کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1810724 1025570 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells
چکیده انگلیسی

We report on the fabrication of GaAs based p–i–n solar cells containing 5 and 10 layers of type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing quantum rings show improved efficiency at longer wavelengths into the near-IR extending up to 1500 nm and show enhanced short-circuit current under 1 sun illumination compared to a GaAs control cell. A reduction in the open-circuit voltage is observed due to the build-up of internal strain. The MBE growth, formation and photoluminescence of single and stacked layers of GaSb/GaAs quantum rings are also presented.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 407, Issue 10, 15 May 2012, Pages 1493–1496
نویسندگان
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