کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1810750 | 1025570 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interface properties of an O2 annealed Au/Ni/n-Al0.18Ga0.82N Schottky contact
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We oxidized a Ni/Au metal bi-layer contact fabricated on HVPE Al0.18Ga0.82N from 373Â K to 573Â K in 100Â K steps. In the range 1Â kHz to 2Â MHz, the Capacitance-Voltage-Frequency (C-V-f) measurements reveal a frequency dispersion of the capacitance and the presence of an anomalous peak at 0.4Â V owing to the presence of interface states in the as deposited contact system. The dispersion was progressively removed by O2 anneals from temperatures as low as 373Â K. These changes are accompanied by an improvement in the overall quality of the Schottky system: the ideality factor, n, improves from 2.09 to 1.26; the Schottky barrier height (SBH), determined by the Norde [1] method, increases from 0.72Â eV to 1.54Â eV. From the Nicollian and Goetzberger model [2], we calculated the energy distribution of the density of interface states, NSS. Around 1Â eV above the Al0.18Ga0.82N valence band, NSS, decreases from 2.3Ã1012Â eVâ1Â cmâ2 for the un-annealed diodes to 1.3Ã1012Â eVâ1Â cmâ2 after the 573Â K anneal. Our results suggest the formation of an insulating NiO leading to a MIS structure for the oxidized Au/Ni/Al0.18Ga0.82N contact.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 407, Issue 10, 15 May 2012, Pages 1599-1602
Journal: Physica B: Condensed Matter - Volume 407, Issue 10, 15 May 2012, Pages 1599-1602
نویسندگان
M.J. Legodi, W.E. Meyer, F.D. Auret,