Simultaneous effects of temperature and pressure on diamagnetic susceptibility of a shallow donor in a quantum antidot

The effect of temperature and pressure, simultaneously, on the diamagnetic susceptibility and binding energy of a hydrogenic donor impurity at the center of a GaAs/Ga1−xAlxAsGaAs/Ga1−xAlxAs quantum antidot is studied within the effective mass approximation. For this goal, we first analytically solve the Schrödinger equation to obtain wavefunctions and energy levels. Then, using the electronic states, we can calculate the diamagnetic susceptibility. The results obtained from the present work reveals that (i) the diamagnetic susceptibility increases with increasing pressure, (ii) the diamagnetic susceptibility decreases by increasing temperature, (iii) the value of 〈r2〉〈r2〉 decreases with increasing pressure due to the quantum confinement, and (iv) an increase in the pressure enhances the binding energy for a constant temperature.