کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1811256 1525240 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Impedance spectroscopic studies of an organic semiconductor device incorporating a thin film of highly doped ZnPc with MoO3
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Impedance spectroscopic studies of an organic semiconductor device incorporating a thin film of highly doped ZnPc with MoO3
چکیده انگلیسی

We use experimental results of low signal impedance spectroscopy to investigate the conduction mechanism in organic semiconductor, zinc phthalocyanine (ZnPc). The first 10 nm, of a total of 150 nm thermally deposited ZnPc, was doped with molybdenum oxide (MoO3) by co-evaporation to obtain a 20% doping concentration. The ac electrical parameters were measured at room temperature in the dc bias and frequency ranges of 0–5 V and 100 Hz–0.1 MHz, respectively. The variation of bulk resistance with applied bias presents a clear indication of space charge limited conduction in the fabricated device. The experimental results show a strong frequency dependence of capacitance and loss tangent at low frequencies and high applied bias, while at higher frequencies and low applied bias a weak dependence is observed. Moreover, the ac conductivity shows a strong dependence on frequency and is found to vary as ωs with the index s≤1.15 suggesting a dominant hopping mechanism of conduction.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issues 6–7, 15 March 2011, Pages 1238–1241
نویسندگان
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