کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1811320 1025592 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Multiphonon hopping of carriers in CuO thin films
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Multiphonon hopping of carriers in CuO thin films
چکیده انگلیسی

We have performed a detailed study of the electrical conduction process in CuO thin films deposited by the sol–gel dip coating technique in a temperature range 280–420 K. The electrical conduction is analyzed within the framework of various hopping conduction models. Multiphonon hopping conduction mechanism is found to dominate the electrical transport in the entire temperature region. Our results are consistent with this model of hopping conduction mechanisms with weak carrier–lattice coupling.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issue 19, 1 October 2011, Pages 3551–3555
نویسندگان
, , , ,