Effect of sulfur substitutions on optical, electrical and structural properties of Ge(SxSe1−x)2 system

► Ge(SxSe1−x)2 alloys were prepared by the Thermal/flash evaporation technique. ► Replacement of Se by S increases the optical energy gap linearly. ► Increase in S content leads to an increase in the total defect states. ► The X-ray diffraction pattern confirms a change in the intermediate range order.