کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1811479 | 1525239 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impact of doping on carrier recombination and stimulated emission in highly excited GaN:Mg
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Light-induced transient grating and photoluminescence measurements were employed for carrier recombination studies in variously Mg doped GaN layers. Carrier lifetime and ambipolar diffusion coefficient were found to decrease with doping from 210 to 20 ps and from 2.0 to 0.9 cm2/s,respectively, which proved the degradation of electrical quality of the layers. A threshold of stimulated emission was found to depend non-monotonously on doping and had the lowest value of 0.19 mJ/cm2 in the most doped layer. This dependence was explained in terms of degeneracy of the hole system.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issues 15–16, August 2011, Pages 2990–2993
Journal: Physica B: Condensed Matter - Volume 406, Issues 15–16, August 2011, Pages 2990–2993
نویسندگان
R. Aleksiejūnas, S. Krotkus, S. Nargelas, S. Miasojedovas, S. Juršėnas,