کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1811570 | 1025598 | 2010 | 5 صفحه PDF | دانلود رایگان |

Indium oxide (In2O3) films have been prepared by thermal oxidation of vacuum deposited indium (In) films onto glass substrate kept at room temperature (35 °C). The structural, optical and gas sensing properties of films oxidized in air at 400 and 500 °C have been investigated. X-ray diffraction (XRD) measurements indicate that the In2O3 films oxidized at these temperatures exhibit a high degree of crystallographic orientation along (2 2 2) plane. Field emission scanning electron microscopy shows large and small grains scattered at the surface of In2O3 films. The optical and sensing studies show that In2O3 film oxidized at 500 °C exhibits comparatively higher optical band gap of 3.8 eV and large gas response of 92% when exposed to 1000 ppm of ammonia at room temperature. Also an increase in optical absorbance towards ammonia for different concentrations at room temperature has been observed.
Journal: Physica B: Condensed Matter - Volume 405, Issue 15, 1 August 2010, Pages 3124–3128