کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1811890 | 1025603 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Contribution of weak localization, electron-electron interaction, and Zeeman spin-splitting effects in corrective term “mT1/2” of the metallic conductivity in n-type GaAs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We present measurements of the electrical conductivity of barely metallic n-type GaAs that are driven to the metal-insulator transition (MIT) by magnetic field. The experiments were carried out at low temperature in the range (4.2-0.066Â K) and in magnetic field up to 4Â T. We have determined the magnetic field for which the conductivity changes from the metallic behavior to insulator regime. On the metallic side of the MIT, the electrical conductivity is found to obey Ï=Ï0+mT1/2 down to 66Â mK. Physical explanation to the temperature dependence of the conductivity is given in metallic side of the MIT using a competition between different effects involved in the mechanisms of conduction, like electron-electron interaction effect, Zeeman spin-splitting effect, and weak localization effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issue 18, 15 September 2011, Pages 3489-3492
Journal: Physica B: Condensed Matter - Volume 406, Issue 18, 15 September 2011, Pages 3489-3492
نویسندگان
A. Sybous, A. El kaaouachi, N. Ait Ben Ameur, B. Capoen, J. Hemine, R. Abdia, A. Narjis, H. Sahsah, G. Biskupski,