کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1811908 1025604 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electron capture and intra-band relaxation by means of Auger processes in colloidal semiconductor nanocrystals
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Electron capture and intra-band relaxation by means of Auger processes in colloidal semiconductor nanocrystals
چکیده انگلیسی

The electron relaxation dynamics in combination with LO phonon-assisted electron capture and intra-dot Auger scattering processes in a spherical quantum dot embedded in non-polar matrix is presented theoretically. The electron capture efficiency is investigated as a function of the lattice temperature and quantum dot radius for a deferent injected electron concentration, taking into account the confinement effect of the polar optical phonons in spherical quantum dots. Exact numerical calculations for the phonon-assisted electron capture rate as well as for the Auger scattering rate in colloidal CdSe quantum dot have been carried out. These calculations are consistent with experiment.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issue 3, 1 February 2011, Pages 331–334
نویسندگان
,