کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1811908 | 1025604 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electron capture and intra-band relaxation by means of Auger processes in colloidal semiconductor nanocrystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The electron relaxation dynamics in combination with LO phonon-assisted electron capture and intra-dot Auger scattering processes in a spherical quantum dot embedded in non-polar matrix is presented theoretically. The electron capture efficiency is investigated as a function of the lattice temperature and quantum dot radius for a deferent injected electron concentration, taking into account the confinement effect of the polar optical phonons in spherical quantum dots. Exact numerical calculations for the phonon-assisted electron capture rate as well as for the Auger scattering rate in colloidal CdSe quantum dot have been carried out. These calculations are consistent with experiment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issue 3, 1 February 2011, Pages 331–334
Journal: Physica B: Condensed Matter - Volume 406, Issue 3, 1 February 2011, Pages 331–334
نویسندگان
Arshak L. Vartanian,