Crystallization kinetics, glass transition kinetics, and thermal stability of Se70−xGa30Inx (x=5, 10, 15, and 20) semiconducting glasses

Crystallization and glass transition kinetics of Se70−xGa30Inx (x=5, 10, 15, and 20) semiconducting chalcogenide glasses were studied under non-isothermal condition using a Differential Scanning Calorimeter (DSC). DSC thermograms of the samples were recorded at four different heating rates 5, 10, 15, and 20 K/min. The variation of the glass transition temperature (Tg) with the heating rate (β) was used to calculate the glass transition activation energy (Et) using two different models. Meanwhile, the variation of the peak temperature of crystallization (Tp) with β was utilized to deduce the crystallization activation energy (Ec) using Kissinger, Augis–Bennet, and Takhor models. Results reveal that Et decreases with increasing In content, while both Tg and Ec exhibit the opposite behavior, and the crystal growth occurs in one dimension. The variation of these thermal parameters with the average coordination number was also discussed, and the results were interpreted in terms of the type of bonding that In makes with Se. Assessment of thermal stability and glass forming ability (GFA) was carried out on the basis of some quantitative criteria and the results indicate that thermal stability is enhanced while the crystallization rate is reduced with the addition of In to Se–Ga glass.

Research highlights
► Addition of In to Se–Ga glass decreases the glass transition activation energy.
► The crystallization rate in Se–Ga–In glass is reduced as In content increases.
► The crystal growth in Se–Ga–In glass occurs in one dimension.
► Thermal properties of Se–Ga–In glass indicate a shift in Phillips–Thorpe threshold.