The influence of various dielectric parameters on the reststrahlen region of SiC

The reststrahlen region of SiC is analysed with the goal of establishing the origin of different shapes of this band, by varying the dielectric parameters involved when simulating the reststrahlen region as obtained by infrared reflectance.

Research highlights
► An anomalous peak observed in the reststrahlen band of SiC was investigated.
► The reflection spectrum of SiC in the reststrahlen region was simulated by theoretical calculations.
► The influence on the reststrahlen band of the dielectric parameters used in the simulations is discussed.
► Dielectric parameters used in the simulations did not yield the anomalous peak that is observed experimentally.