کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1812051 | 1025607 | 2011 | 5 صفحه PDF | دانلود رایگان |

First-principles calculations have been performed to investigate the doping behaviors of Al and N dopant impurities in ZnO. According to the results, in the Al mono-doping case, the impurity states are quite delocalized, the corresponding effective masses are small, and the formation energy is as low as −9.71 eV. In the N mono-doping case, the impurity states are localized, the effective masses are large, and the formation energy is high (4.55 eV in the most favorable extreme O-rich conditions). In the Al–N codoping case, the corresponding effective masses are marked decreased compared to the N mono-doping situations, and the formation energy of the N–Al–N system is as low as −2.54 eV in the O-rich condition. The above results can explain the electrical behaviors of the doped or codoped ZnO systems observed in experiments.
Journal: Physica B: Condensed Matter - Volume 406, Issue 17, 1 September 2011, Pages 3125–3129