کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1812053 | 1025607 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
First-principle study on the electronic and optical properties of Mn-doped SnO2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Using the full-potential linearized augmented plane wave method (FP-LAPW), we have investigated the electronic and optical properties of Sn1−xMnxO2 (x=0, 0.0625, 0.125, 0.1875, 0.25). The doped Mn results in reduction of the band gap, which can be attributed to a series of impurity bands at the bottom of the conduction band caused by the strong hybridization between Mn 3d and O 2p. The results also show that the Mn-doped systems tend to convert into p-type semiconductor with direct band gaps. With the increase of Mn concentration, both the imaginary part of dielectric function and the absorption spectrum show red-shift corresponding to the change of band gaps.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 406, Issue 17, 1 September 2011, Pages 3137–3141
Journal: Physica B: Condensed Matter - Volume 406, Issue 17, 1 September 2011, Pages 3137–3141
نویسندگان
Yao Lu, Pei-Ji Wang, Chang-Wen Zhang, Xian-Yang Feng, Lei Jiang, Guo-Lian Zhang,