کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1812195 | 1025610 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
TSC measurements in a-Ge22Se78âxBix thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In the present paper thermally stimulated current measurements have been made in a-Ge22Se78âxBix (x=0, 10) thin films in order to determine trap parameters such as trap depth and trap density. Trap depth has been calculated using the initial rise method proposed by Garlick and Gibson. The trap depth is found to be 0.41 and 0.30Â eV for x=0 and 10, respectively. The trap density (Nt) was also calculated, which was found to be 2.08Ã1017 and 1.48Ã1016Â cmâ3 for x=0 and 10, respectively. The decrease in trap density on Bi addition is explained in terms of the structure of the ternary alloy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 405, Issue 24, 15 December 2010, Pages 4982-4985
Journal: Physica B: Condensed Matter - Volume 405, Issue 24, 15 December 2010, Pages 4982-4985
نویسندگان
S. Yadav, D. Kumar, R.K. Pal, S.K. Sharma, A. Kumar,