Self-consistent calculation of transport properties in Si δ-dopedδ-doped GaAs quantum wells as a function of the temperature

The electronic structure of a delta-doped quantum well of Si in GaAs is studied at different temperatures. The calculation is carried out self-consistently in the framework of the Hartree approximation. The energy levels and the mobility trends are reported for various impurity densities. As a consequence, the temperature dependence of the mobility can be explained by means of the temperature variation of the electronic structure. The calculated ratios between mobilities at 300 and 77 K, at different impurity densities, are in excellent agreement with the experimental data. These results can also be extrapolated to other similar systems like B, GaN, InSb, InAs and GaAs.