Effects of dislocations on small signal high frequency hot electron mobility in n-GaN at low and high temperatures under high magnetic fields including hot phonon effect

The small signal high-frequency ac mobility of hot electrons in n-GaN in the extreme quantum limit at low- and high-temperatures has been calculated considering the non-equilibrium phonon distribution as well as the thermal phonon distributions. The energy loss rate has been calculated considering the dominance of the piezo electric coupling scattering and the polar optical phonon scattering while the momentum loss rate has been calculated considering the acoustic phonon scattering via deformation potential and the piezo electric coupling and the dislocation scattering.