Aggregation performance of CdO grains grown on surface of N 〈1 0 0〉 silicon crystal

Four kinds of aggregation patterns of CdO grains were formed on the surface of N 〈1 0 0〉 silicon substrate heated at 580 °C for 1 h in an evaporation-deposition device. They were ellipse-shaped or quasi-circular-shaped aggregate, long ribbon-shaped aggregate, long chain-shaped or long double-chain-shaped aggregate, and long ellipse-chain-shaped aggregate. These aggregates consisted of numerous grains or tiny crystals, and deposited on top of the CdO bush-like long crystal clusters grown earlier. They exhibited clearly spontaneous self-organization aggregation performance. Surface defects of the virgin N 〈1 0 0〉 silicon crystal were analyzed, and mechanism of the self-organization aggregation was discussed with a defect induced aggregation (DIA) model.