Photoconductive and electrical transport properties of AgInSe2 thin films prepared by co-evaporation

Measurements of conductivity as a function of temperature, carried out in the range between 90 and 600 K, revealed that the electrical transport in AISe films is affected by two different mechanisms. At temperatures greater than 350 K, the conductivity is predominantly affected by hole transport in extended states of the valence band, whereas at temperatures below 250 K the conductivity is mainly determined by the variable range hopping (VRH) transport mechanism. The results also revealed that the growth temperature and chemical composition critically affect the recombination processes and the photosensitivity of the AISe films.